High-Temperature Nucleation of Cubic Silicon Carbide on (0001) Hexagonal-SiC Nominal Surfaces
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- 作者：Laurence Latu-Romain ; Didier Chaussende ; Michel Pons
- 刊名：Crystal Growth & Design
- 出版年：2006
- 出版时间：December 2006
- 年：2006
- 卷：6
- 期：12
- 页码：2788 - 2794
- 全文大小：852K
- 年卷期：v.6,no.12(December 2006)
- ISSN：1528-7505
文摘
The development of 3C-SiC crystals from <0001> oriented hexagonal seed has always suffered from systematictwinning that appears during the nucleation step of the layer. To investigate the possibility to reduce or eliminate the incoherenttwin boundaries at high temperature (for conditions close to bulk growth ones), we conducted an experimental study on 3C-SiCnucleation. A mechanism for the selection of one 3C-SiC orientation among the two possible is proposed. It is based on a stronginteraction between the 
-SiC substrate steps and the anisotropic lateral expansion of the 
-SiC domains. This model is confirmedby cross-sectional high resolution transmission microscopy observations of the - interface. The mechanism is discussed withrespect to the surface polarity (Si or C faces), the miscut angle, and the substrate polytype.
-SiC substrate steps and the anisotropic lateral expansion of the -SiC domains. This model is confirmedby cross-sectional high resolution transmission microscopy observations of the - interface. The mechanism is discussed withrespect to the surface polarity (Si or C faces), the miscut angle, and the substrate polytype.