Formation of Inert Bi2Se3(0001) Cleaved Surface

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• 作者：V. V. Atuchin ; V. A. Golyashov ; K. A. Kokh ; I. V. Korolkov ; A. S. Kozhukhov ; V. N. Kruchinin ; S. V. Makarenko ; L. D. Pokrovsky ; I. P. Prosvirin ; K. N. Romanyuk ; O. E. Tereshchenko
• 刊名：Crystal Growth & Design
• 出版年：2011
• 出版时间：December 7, 2011
• 年：2011
• 卷：11
• 期：12
• 页码：5507-5514
• 全文大小：1015K
• 年卷期：v.11,no.12(December 7, 2011)
• ISSN：1528-7505

文摘

A high quality inclusion-free Bi₂Se₃ crystal has been grown by the Bridgman method with the use of a rotating heat field. A large-area atomically flat Bi₂Se₃(0001) surface of excellent crystallographic quality has been formed by cleavage. Chemical and microstructural properties of the surface have been evaluated with reflection high-energy electron diffraction, atomic force microscopy (AFM), scanning tunneling microscopy (STM), spectroscopic ellipsometry, and X-ray photoelectron spectroscopy. There was no Bi₂Se₃(0001) surface oxidation detected after over a month in air under ambient conditions as shown by comparative core level spectroscopy, AFM, and STM.