Vapor Transport Synthesis of Two-Dimensional SnS2 Nanocrystals Using a SnS2 Precursor Obtained from the Sulfurization of SnO2

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• 作者：Jun Cheol Park ; Kyoung Ryun Lee ; Hoseok Heo ; Se-Hun Kwon ; Jung-Dae Kwon ; Myoung-Jae Lee ; Woojin Jeon ; Seong-Jun Jeong ; Ji-Hoon Ahn
• 刊名：Crystal Growth & Design
• 出版年：2016
• 出版时间：July 6, 2016
• 年：2016
• 卷：16
• 期：7
• 页码：3884-3889
• 全文大小：475K
• 年卷期：0
• ISSN：1528-7505

文摘

Manufacturing high-quality, two-dimensional (2D), layered materials with crystal-growth techniques is an important challenge for the advancement of 2D communication technologies. In this study, a simple method was developed for synthesizing 2D nanocrystals based on the model system of SnS<sub>2sub>. The method involves the sulfurization of a metal oxide to a metal chalcogenide, which subsequently acts as a source of vapors for the growth of 2D crystals. The effect of the annealing conditions on the thermal sulfurization of SnO<sub>2sub> powder was investigated. The results showed that pure SnS<sub>2sub> powder could be obtained in a N<sub>2sub> atmosphere at 700 °C. SnS<sub>2sub> nanocrystals were successfully synthesized from the as-prepared SnS<sub>2sub> powder by the vapor transport method. The synthesized SnS<sub>2sub> nanocrystals had a 2D layered structure with hexagonal symmetry and exhibited typical n-type semiconducting characteristics, with an optical band gap of 2.05 eV. This novel method, which uses a preferentially prepared source for vapor transport, could provide a simple way to synthesize new types of 2D layered materials. This is because it only requires the volatilization of a source and subsequent condensation to a single crystal for the growth of 2D materials, with no complex chemical reactions occurring during vapor transport.