Enhanced Graphene Mechanical Properties through Ultrasmooth Copper Growth Substrates
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- 作者：Mark H. Griep ; Emil Sandoz-Rosado ; Travis M. Tumlin ; Eric Wetzel
- 刊名：Nano Letters
- 出版年：2016
- 出版时间：March 9, 2016
- 年：2016
- 卷：16
- 期：3
- 页码：1657-1662
- 全文大小：349K
- ISSN：1530-6992
文摘
The combination of extraordinary strength and stiffness in conjunction with exceptional electronic and thermal properties in lightweight two-dimensional materials has propelled graphene research toward a wide array of applications including flexible electronics and functional structural components. Tailoring graphene’s properties toward a selected application requires precise control of the atomic layer growth process, transfer, and postprocessing procedures. To date, the mechanical properties of graphene are largely controlled through postprocess defect engineering techniques. In this work, we demonstrate the role of varied catalytic surface morphologies on the tailorability of subsequent graphene film quality and breaking strength, providing a mechanism to tailor the physical, electrical, and mechanical properties at the growth stage. A new surface planarization methodology that results in over a 99% reduction in Cu surface roughness allows for smoothness parameters beyond that reported to date in literature and clearly demonstrates the role of Cu smoothness toward a decrease in the formation of bilayer graphene defects, altered domain sizes, monolayer graphene sheet resistance values down to 120 Ω/□ and a 78% improvement in breaking strength. The combined electrical and mechanical enhancements achieved through this methodology allows for the direct growth of application quality flexible transparent conductive films with monolayer graphene.