High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits

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• 作者：Lili Yu ; Ahmad Zubair ; Elton J. G. Santos ; Xu Zhang ; Yuxuan Lin ; Yuhao Zhang ; Tom谩s Palacios
• 刊名：Nano Letters
• 出版年：2015
• 出版时间：August 12, 2015
• 年：2015
• 卷：15
• 期：8
• 页码：4928-4934
• 全文大小：524K
• ISSN：1530-6992

文摘

Because of their extraordinary structural and electrical properties, two-dimensional materials are currently being pursued for applications such as thin-film transistors and integrated circuit. One of the main challenges that still needs to be overcome for these applications is the fabrication of air-stable transistors with industry-compatible complementary metal oxide semiconductor (CMOS) technology. In this work, we experimentally demonstrate a novel high performance air-stable WSe₂ CMOS technology with almost ideal voltage transfer characteristic, full logic swing and high noise margin with different supply voltages. More importantly, the inverter shows large voltage gain (鈭?8) and small static power (picowatts), paving the way for low power electronic system in 2D materials.