Topologically Protected Metallic States Induced by a One-Dimensional Extended Defect in the Bulk of a 2D Topological Insulator

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• 作者：Erika N. Lima ; Tome M. Schmidt ; Ricardo W. Nunes
• 刊名：Nano Letters
• 出版年：2016
• 出版时间：July 13, 2016
• 年：2016
• 卷：16
• 期：7
• 页码：4025-4031
• 全文大小：382K
• 年卷期：0
• ISSN：1530-6992

文摘

We report ab initio calculations showing that a one-dimensional extended defect generates topologically protected metallic states immersed in the bulk of two-dimensional topological insulators. We find that a narrow extended defect, composed of periodic units consisting of one octagonal and two pentagonal rings (a 558 extended defect), embedded in the hexagonal bulk of a bismuth bilayer, introduces two pairs of one-dimensional counterpropagating helical-Fermion electronic bands with the opposite spin-momentum locking characteristic of the topological metallic states that appear at the edges in two-dimensional topological insulators. Each one of these pairs of helical-Fermion bands is localized, respectively, along each one of the zigzag chains of bismuth atoms at the core of the 558 extended defect, and their hybridization leads to the opening of very small gaps (6 meV or less) in the helical-Fermion dispersions of these defect-related modes. We discuss the connection between the defect-induced metallic modes and the helical-Fermion edge states that occur on bismuth bilayer ribbons.