Anisotropic Island Growth: A New Approach to Thin Film Electrocrystallization

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• 作者：Lian Guo ; Peter C. Searson
• 刊名：Langmuir
• 出版年：2008
• 出版时间：October 7, 2008
• 年：2008
• 卷：24
• 期：19
• 页码：10557-10559
• 全文大小：135K
• 年卷期：v.24,no.19(October 7, 2008)
• ISSN：1520-5827

文摘

The electrochemical deposition of metals onto foreign substrates usually occurs through Volmer−Weber island growth, and hence the structure and properties of thin films are critically dependent on the mechanism of nucleation and growth. For example, high nucleus densities are essential for achieving island coalescence at small thickness. Here we demonstrate a new approach to controlling thin film microstructure through the control of island geometry. By promoting anisotropic island growth, film coalescence can be achieved at smaller thickness and with lower island densities.