Vertical Graphene-Base Hot-Electron Transistor

详细信息    查看全文

• 作者：Caifu Zeng ; Emil B. Song ; Minsheng Wang ; Sejoon Lee ; Carlos M. Torres ; Jr. ; Jianshi Tang ; Bruce H. Weiller ; Kang L. Wang
• 刊名：Nano Letters
• 出版年：2013
• 出版时间：June 12, 2013
• 年：2013
• 卷：13
• 期：6
• 页码：2370-2375
• 全文大小：350K
• 年卷期：v.13,no.6(June 12, 2013)
• ISSN：1530-6992

文摘

We demonstrate vertical graphene-base hot-electron transistors (GB-HETs) with a variety of structures and material parameters. Our GB-HETs exhibit a current saturation with a high current on鈥搊ff ratio (>10⁵), which results from both the vertical transport of hot electrons across the ultrathin graphene base and the filtering of hot electrons through a built-in energy barrier. The influences of the materials and their thicknesses used for the tunneling and filtering barriers on the common-base current gain 伪 are studied. The optimization of the SiO₂ thickness and using HfO₂ as the filtering barrier significantly improves the common-base current gain 伪 by more than 2 orders of magnitude. The results demonstrate that GB-HETs have a great potential for high-frequency, high-speed, and high-density integrated circuits.

Keywords:

Graphene; hot electron transistor; graphene base; graphene heterostructure; on鈭抩ff ratio; current gain