Quantum Dot Behavior in Bilayer Graphene Nanoribbons

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• 作者：Minsheng Wang ; Emil B. Song ; Sejoon Lee ; Jianshi Tang ; Murong Lang ; Caifu Zeng ; Guangyu Xu ; Yi Zhou ; Kang L. Wang
• 刊名：ACS Nano
• 出版年：2011
• 出版时间：November 22, 2011
• 年：2011
• 卷：5
• 期：11
• 页码：8769-8773
• 全文大小：865K
• 年卷期：0
• ISSN：1936-086X

文摘

Bilayer graphene has recently earned great attention for its unique electronic properties and commendable use in electronic applications. Here, we report the observation of quantum dot (QD) behaviors in bilayer graphene nanoribbons (BL-GNRs). The periodic Coulomb oscillations indicate the formation of a single quantum dot within the BL-GNR because of the broad distribution function of the carrier concentration fluctuation at the charge neutrality point. The size of the QD changes as we modulate the relative position between the Fermi level and surface potential. Furthermore, the potential barriers forming the QD remain stable at elevated temperatures and external bias. In combination with the observation of transport gaps, our results suggest that the disordered surface potential creates QDs along the ribbon and governs the electronic transport properties in BL-GNRs.