文摘
We report the interface properties of atomic-layer-deposited Al2O3 thin films on ultraviolet/ozone (UV/O3)-treated multilayer MoS2 crystals. The formation of S–O bonds on MoS2 after low-power UV/O3 treatment increased the surface energy, allowing the subsequent deposition of uniform Al2O3 thin films. The capacitance–voltage measurement of Au–Al2O3–MoS2 metal oxide semiconductor capacitors indicated n-type MoS2 with an electron density of ∼1017 cm–3 and a minimum interface trap density of ∼1011 cm–2 eV–1. These results demonstrate the possibility of forming a high-quality Al2O3–MoS2 interface by proper UV/O3 treatment, providing important implications for their integration into field-effect transistors.