文摘
Optically transparent and mechanically flexible thin-film transistors have recently attracted attention for next generation transparent display technologies. Driving and switching transistors for transparent displays have challenging requirements such as high optical transparency, large-scale integration, suitable drive current (Ion) in the microampere range, high on/off current ratio (Ion/Ioff), high field-effect mobility, and uniform threshold voltage (Vth). In this study, we demonstrate fully transparent high-performance and high-yield thin-film transistors based on random growth of a single-walled carbon nanotube (SWNT) network that are easy to fabricate. High-performance SWNT-TFTs exhibit optical transmission of 80% in visible wavelength, Ion/Ioff higher than 103, and a high yield with reproducible electrical characteristics.