Fully Transparent Pixel Circuits Driven by Random Network Carbon Nanotube Transistor Circuitry

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• 作者：Sunkook Kim ; Seongmin Kim ; Jongsun Park ; Sanghyun Ju ; Saeed Mohammadi
• 刊名：ACS Nano
• 出版年：2010
• 出版时间：June 22, 2010
• 年：2010
• 卷：4
• 期：6
• 页码：2994-2998
• 全文大小：372K
• 年卷期：0
• ISSN：1936-086X

文摘

Optically transparent and mechanically flexible thin-film transistors have recently attracted attention for next generation transparent display technologies. Driving and switching transistors for transparent displays have challenging requirements such as high optical transparency, large-scale integration, suitable drive current (I_on) in the microampere range, high on/off current ratio (I_on/I_off), high field-effect mobility, and uniform threshold voltage (V_th). In this study, we demonstrate fully transparent high-performance and high-yield thin-film transistors based on random growth of a single-walled carbon nanotube (SWNT) network that are easy to fabricate. High-performance SWNT-TFTs exhibit optical transmission of 80% in visible wavelength, I_on/I_off higher than 10³, and a high yield with reproducible electrical characteristics.