All Graphene-Based Thin Film Transistors on Flexible Plastic Substrates

详细信息    查看全文

• 作者：Seoung-Ki Lee ; Ho Young Jang ; Sukjae Jang ; Euiyoung Choi ; Byung Hee Hong ; Jaichan Lee ; Sungho Park ; Jong-Hyun Ahn
• 刊名：Nano Letters
• 出版年：2012
• 出版时间：July 11, 2012
• 年：2012
• 卷：12
• 期：7
• 页码：3472-3476
• 全文大小：349K
• 年卷期：v.12,no.7(July 11, 2012)
• ISSN：1530-6992

文摘

High-performance, flexible all graphene-based thin film transistor (TFT) was fabricated on plastic substrates using a graphene active layer, graphene oxide (GO) dielectrics, and graphene electrodes. The GO dielectrics exhibit a dielectric constant (3.1 at 77 K), low leakage current (17 mA/cm²), breakdown bias (1.5 脳 10⁶ V/cm), and good mechanical flexibility. Graphene-based TFTs showed a hole and electron mobility of 300 and 250 cm²/(V路s), respectively, at a drain bias of 鈭?.1 V. Moreover, graphene TFTs on the plastic substrates exhibited remarkably good mechanical flexibility and optical transmittance. This method explores a significant step for the application of graphene toward flexible and stretchable electronics.

Keywords:

hors" href="http://pubs.acs.org/action/doSearch?action=search&searchText=Graphene&qsSearchArea=searchText">Graphene; hors" href="http://pubs.acs.org/action/doSearch?action=search&searchText=graphene+oxide&qsSearchArea=searchText">graphene oxide; hors" href="http://pubs.acs.org/action/doSearch?action=search&searchText=flexible+electronics&qsSearchArea=searchText">flexible electronics; hors" href="http://pubs.acs.org/action/doSearch?action=search&searchText=thin+film+transistor&qsSearchArea=searchText">thin film transistor