Control over Alignment and Growth Kinetics of Si Nanowires through Surface Fluctuation of Liquid Precursor

详细信息    查看全文

• 作者：Yi-Seul Park ; Da Hee Jung ; Jin Seok Lee
• 刊名：Crystal Growth & Design
• 出版年：2016
• 出版时间：December 7, 2016
• 年：2016
• 卷：16
• 期：12
• 页码：6700-6704
• 全文大小：517K
• ISSN：1528-7505

文摘

Control over alignment and growth kinetics of vertically aligned Si nanowire (v-SiNW) arrays, which were grown using chemical vapor deposition (CVD) via a metal catalyst-assisted vapor–liquid–solid (VLS) mechanism, was demonstrated by introducing a homemade bubbler system containing a SiCl₄ solution as the Si precursor. Careful control over the bubbler afforded different amounts of SiCl₄ supplied to the reactor. By varying the dipping depth (D_d) and tilting angle (T_a) of the bubbler, the SiCl₄ precursor concentration would fluctuate to different degrees. The different SiCl₄ concentrations afforded the fine-tuning of v-SiNW array properties like alignment and growth kinetics. The degree of alignment of v-SiNWs could be increased with large amounts of SiCl₄, which was caused by slight shallow depth or gentle tilting of the SiCl₄ solution in the bubbler due to an increasing degree of fluctuation and fluctuation area. The ability to control alignment and growth kinetics of v-SiNW arrays could be employed in advanced nanoelectronic devices.