Highly Transparent, Visible-Light Photodetector Based on Oxide Semiconductors and Quantum Dots
详细信息 查看全文
- 作者：Seung Won Shin ; Kwang-Ho Lee ; Jin-Seong Park ; Seong Jun Kang
- 刊名：ACS Applied Materials & Interfaces
- 出版年：2015
- 出版时间：September 9, 2015
- 年：2015
- 卷：7
- 期：35
- 页码：19666-19671
- 全文大小：377K
- ISSN：1944-8252
文摘
Highly transparent phototransistors that can detect visible light have been fabricated by combining indium鈥揼allium鈥搝inc oxide (IGZO) and quantum dots (QDs). A wide-band-gap IGZO film was used as a transparent semiconducting channel, while small-band-gap QDs were adopted to absorb and convert visible light to an electrical signal. Typical IGZO thin-film transistors (TFTs) did not show a photocurrent with illumination of visible light. However, IGZO TFTs decorated with QDs showed enhanced photocurrent upon exposure to visible light. The device showed a responsivity of 1.35 脳 104 A/W and an external quantum efficiency of 2.59 脳 104 under illumination by a 635 nm laser. The origin of the increased photocurrent in the visible light was the small band gap of the QDs combined with the transparent IGZO films. Therefore, transparent phototransistors based on IGZO and QDs were fabricated and characterized in detail. The result is relevant for the development of highly transparent photodetectors that can detect visible light.