Arsenic Silylamide: An Effective Precursor for Arsenide Semiconductor Nanocrystal Synthesis

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• 作者：Adita Das ; Armen Shamirian ; Preston T. Snee
• 刊名：Chemistry of Materials
• 出版年：2016
• 出版时间：June 14, 2016
• 年：2016
• 卷：28
• 期：11
• 页码：4058-4064
• 全文大小：430K
• 年卷期：0
• ISSN：1520-5002

文摘

The synthesis of metal arsenide semiconductor nanocrystals is challenging compared to other conventional materials (e.g., II–VI family CdSe) due to a high degree of covalency in crystal lattice and a lack of a variety of effective pnictide precursors. We reported here the use of [(Me₃Si)₂N]₂AsCl (“arsenic silylamide”) to synthesize a variety of binary and tertiary quantum confined species such as InAs (III–V), Cd₃As₂ (II–V), and Cu₃AsS₄ (enargite, I₃–V–VI₄) nanocrystals. The physical properties of this reagent resolve many issues, especially concerning safety, with other precursors such as pyrophoric (TMS)₃As and highly toxic AsH₃ gas. Furthermore, usage of this reagent has allowed for the realization of enargite quantum rods for the first time. The role of arsenic silylamide in the reaction mechanism to form InAs has been elucidated with a combination of NMR spectroscopy as well as quantum chemical modeling. Cd₃As₂ and Cu₃AsS₄ nanostructures form via a diffusion mechanism.