Organo-arsenic Molecular Layers on Silicon for High-Density Doping

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• 作者：John O鈥機onnell ; Giuseppe Alessio Verni ; Anushka Gangnaik ; Maryam Shayesteh ; Brenda Long ; Yordan M. Georgiev ; Nikolay Petkov ; Gerard P. McGlacken ; Michael A. Morris ; Ray Duffy ; Justin D. Holmes
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2015
• 出版时间：July 22, 2015
• 年：2015
• 卷：7
• 期：28
• 页码：15514-15521
• 全文大小：465K
• ISSN：1944-8252

文摘

This article describes for the first time the controlled monolayer doping (MLD) of bulk and nanostructured crystalline silicon with As at concentrations approaching 2 脳 10²⁰ atoms cm^鈥?. Characterization of doped structures after the MLD process confirmed that they remained defect- and damage-free, with no indication of increased roughness or a change in morphology. Electrical characterization of the doped substrates and nanowire test structures allowed determination of resistivity, sheet resistance, and active doping levels. Extremely high As-doped Si substrates and nanowire devices could be obtained and controlled using specific capping and annealing steps. Significantly, the As-doped nanowires exhibited resistances several orders of magnitude lower than the predoped materials.