Direct-Liquid-Injection Chemical Vapor Deposition of Nickel Nitride Films and Their Reduction to Nickel Films

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• 作者：Zhefeng Li ; Roy G. Gordon ; Venkateswara Pallem ; Huazhi Li ; Deo V. Shenai
• 刊名：Chemistry of Materials
• 出版年：2010
• 出版时间：May 25, 2010
• 年：2010
• 卷：22
• 期：10
• 页码：3060-3066
• 全文大小：927K
• 年卷期：v.22,no.10(May 25, 2010)
• ISSN：1520-5002

文摘

Smooth and continuous films of nickel nitride (NiN_x) with excellent step coverage were deposited from a novel nickel amidinate precursor, Ni(MeC(N^tBu)₂)₂, and either ammonia (NH₃) or a mixture of NH₃ and hydrogen (H₂) gases as co-reactants. The reactants were injected together in direct-liquid-injection chemical vapor deposition (DLI-CVD) processes at substrate temperatures of 160−200 °C. Depending on the ratio of NH₃ to H₂ gases during deposition, the Ni:N atomic ratio in DLI-CVD NiN_x films could be varied from 3:1 to 15:1, having either a cubic nickel structure or a mixture of hexagonal Ni₃N and cubic Ni₄N crystal structures with an incorporation of nitrogen as low as 6%. The chemical vapor deposition (CVD) growth rates of NiN_x could be increased to more than 5 nm/min. The CVD films were smooth and continuous, and they had 100% step coverage in high-aspect-ratio (>50:1) holes. The as-deposited NiN_x films had resistivities as low as 50 μΩ cm for film thicknesses of 25 nm. Annealing of the films in H₂ at 160 °C or hydrogen plasma treatment at room temperature removed the nitrogen and led to pure nickel films.