Adsorption of an Al (III) Impurity onto the (100) Face of a Growing KDP Crystal in Supersaturated Solution
详细信息    查看全文
文摘
The growth-starting supercooling TG, defined as a supercooling at which a crystal starts to grow oncooling, was measured for the (100) face of a potassium dihydrogen phosphate (KDP) crystal on which an Al (III)impurity had been adsorbed beforehand. When adsorption was made onto the nongrowing (100) face at a lowsupercooling value of TA = 0.6 C, the measured values of TG were successfully explained with a mathematicalmodel considering the Langmuir equilibrium (or instantaneous) adsorption. On the contrary, smaller values of TGwere obtained when adsorption was made on the growing (100) face at a high supercooling value of TA = 6.0 C.These smaller values obtained for the adsorption at TA = 6.0 C are concluded to be due to an insufficient amountof the adsorbed Al (III) impurity, and the adsorption is shown to proceed more slowly onto the growing (100) facecompared to the nongrowing face.

© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号

地址:北京市海淀区学院路29号 邮编:100083

电话:办公室:(+86 10)66554848;文献借阅、咨询服务、科技查新:66554700