The growth-starting supercooling
TG, defined as a supercooling at which a crystal starts to grow oncooling, was measured for the (100) face of a potassium dihydrogen phosphate (KDP) crystal on which an Al (III)impurity had been adsorbed beforehand. When adsorption was made onto the nongrowing (100) face at a lowsupercooling value of
TA = 0.6
![](/images/entities/deg.gif)
C, the measured values of
TG were successfully explained with a mathematicalmodel considering the Langmuir equilibrium (or instantaneous) adsorption. On the contrary, smaller values of
TGwere obtained when adsorption was made on the growing (100) face at a high supercooling value of
TA = 6.0
![](/images/entities/deg.gif)
C.These smaller values obtained for the adsorption at
TA = 6.0
![](/images/entities/deg.gif)
C are concluded to be due to an insufficient amountof the adsorbed Al (III) impurity, and the adsorption is shown to proceed more slowly onto the growing (100) facecompared to the nongrowing face.