Fabrication of Pores in a Silicon Carbide Wafer by Electrochemical Etching with a Glassy-Carbon Needle Electrode
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- 作者：Tomohiko Sugita ; Kazuki Hiramatsu ; Shigeru Ikeda ; Michio Matsumura
- 刊名：ACS Applied Materials & Interfaces
- 出版年：2013
- 出版时间：April 10, 2013
- 年：2013
- 卷：5
- 期：7
- 页码：2580-2584
- 全文大小：256K
- 年卷期：v.5,no.7(April 10, 2013)
- ISSN：1944-8252
文摘
An electrochemical method for making pores in a silicon carbide (SiC) wafer, in which a glassy-carbon (GC) needle electrode was used for processing, is described. By bringing the GC electrode into contact with SiC at its tip end in 20 mol dm鈥? HF solution and applying an anodic potential of or higher than 4 V vs Ag/AgCl to it, SiC was etched at the SiC/GC contact area, leading to pore formation in SiC. The diameter of the pore was almost the same as the diameter of the tip of the GC electrode (about 130 渭m). By addition of sulfuric acid to the HF solution, the rate of pore formation was increased. As a result, the depth of pores formed after processing for 5 h at 10 V vs Ag/AgCl was increased from 15.3 渭m to about 33 渭m by addition of sulfuric acid at a concentration of 3.0 mol dm鈥?.