New Material Transistor with Record-High Field-Effect Mobility among Wide-Band-Gap Semiconductors

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• 作者：Cheng Wei Shih ; Albert Chin
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：August 3, 2016
• 年：2016
• 卷：8
• 期：30
• 页码：19187-19191
• 全文大小：365K
• 年卷期：0
• ISSN：1944-8252

文摘

At an ultrathin 5 nm, we report a new high-mobility tin oxide (SnO₂) metal-oxide-semiconductor field-effect transistor (MOSFET) exhibiting extremely high field-effect mobility values of 279 and 255 cm²/V-s at 145 and 205 °C, respectively. These values are the highest reported mobility values among all wide-band-gap semiconductors of GaN, SiC, and metal-oxide MOSFETs, and they also exceed those of silicon devices at the aforementioned elevated temperatures. For the first time among existing semiconductor transistors, a new device physical phenomenon of a higher mobility value was measured at 45–205 °C than at 25 °C, which is due to the lower optical phonon scattering by the large SnO₂ phonon energy. Moreover, the high on-current/off-current of 4 × 10⁶ and the positive threshold voltage of 0.14 V at 25 °C are significantly better than those of a graphene transistor. This wide-band-gap SnO₂ MOSFET exhibits high mobility in a 25–205 °C temperature range, a wide operating voltage of 1.5–20 V, and the ability to form on an amorphous substrate, rendering it an ideal candidate for multifunctional low-power integrated circuit (IC), display, and brain-mimicking three-dimensional IC applications.