Structural Transition in Indium Phosphide Nanowires

详细信息    查看全文

• 作者：Yusuke Kitauchi ; Yasunori Kobayashi ; Katsuhiro Tomioka ; Shinjiro Hara ; Kenji Hiruma ; Takashi Fukui ; Junichi Motohisa
• 刊名：Nano Letters
• 出版年：2010
• 出版时间：May 12, 2010
• 年：2010
• 卷：10
• 期：5
• 页码：1699-1703
• 全文大小：456K
• 年卷期：v.10,no.5(May 12, 2010)
• ISSN：1530-6992

文摘

We study the catalyst-free growth of InP nanowires using selective-area metalorganic vapor phase epitaxy (SA-MOVPE) and show that they undergo transition of crystal structures depending on the growth conditions. InP nanowires were grown on InP substrates where the mask for the template of the growth was defined. The nanowires were grown only in the opening region of the mask. It was found that uniform array of InP nanowires with hexagonal cross section and with negligible tapering were grown under two distinctive growth conditions. The nanowires grown in two different growth conditions were found to exhibit different crystal structures. It was also found that the orientation and size of hexagon were different, suggesting that the difference of the growth behavior. A model for the transition of crystal structure is presented based on the atomic arrangements and termination of InP surfaces. Photoluminescence measurement revealed that the transition took place for nanowires with diameters up to 1 μm.