Spin-Flop Switching and Memory in a Molecular Conductor
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文摘
We report the first observation of spin-flop-induced sharp positive magnetoresistance as large as 100% and nonvolatile magnetoresistive memory in a 蟺鈥揹 hybrid molecular conductor, (DIETSe)2FeCl4 [DIETSe = diiode(ethylenedithio)tetraselenafulvalene]. The unprecedented magnetotransport phenomena originate from the coexistence of the spin density wave (SDW) of the quasi-one-dimensional (Q1D) 蟺 electrons and the antiferromagnetic order of d-electron spins, indicating the interplay between the electronic instability of Q1D 蟺 electrons and local moments of antiferromagnetic d-electron spins. These findings offer new possibilities in molecular electronics/spintronics.

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