We report the piezotronic effects on the photoluminescence (PL) properties of bent ZnO nanowires (NWs). We find that the piezoelectric field largely modifies the spatial distribution of the photoexcited carriers in a bent ZnO NW. This effect, together with strain-induced changes in the energy band structure due to the piezoresistive effects, results in a net redshift of free exciton PL emission from a bent ZnO NW. At the large-size limit, this net redshift depends only on the strain parameter, but it is size-dependent if the diameter of the NW is comparable to that of the depletion layer. The experimental data obtained using the near-field scanning optical microscopy technique at low temperatures support our theoretical model.
Keywords:
ZnO nanowires; strain; bending; photoluminescence; piezotronic effects