Micrometer and Nanometer Scale Photopatterning of Self-Assembled Monolayers of Phosphonic Acids on Aluminum Oxide

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• 作者：Shuqing Sun ; Graham J. Leggett
• 刊名：Nano Letters
• 出版年：2007
• 出版时间：December 2007
• 年：2007
• 卷：7
• 期：12
• 页码：3753 - 3758
• 全文大小：316K
• 年卷期：v.7,no.12(December 2007)
• ISSN：1530-6992

文摘

Self-assembled monolayers of alkylphosphonic acids (APA) have been patterned at the micrometer and nanometer scale by photochemicalmethods. Exposure of APA monolayers to light with a wavelength of 244 nm leads to scission of the C-P bond and desorption of the alkylchain from the surface. Immersion of the specimen in a solution of a second APA leads to adsorption at the surface in the exposed regions.Immersion in a solution of hydroxide ions leads to etching of the exposed regions of the aluminum film. UV exposure appears to anneal thealuminum oxide film, conferring increased resistance to etching at high exposures and a switching the function of the monolayer from apositive to a negative tone resist. At intermediate exposures, nanoscale trenches form at the perimeters of exposed regions. Near-field exposureof the phosphonic acid structures, using a UV laser coupled to a scanning near-field optical microscope, yields well-defined nanostructuredfeatures following development of the pattern in aqueous base, exemplified by the fabrication of 100 nm wide trenches.