GaAs nanowires have been grown on SiO
2 and GaAs by molecular beam epitaxy using manganese as growth catalyst. Transmission electronmicroscopy shows that the wires have a wurtzite-type lattice and that
-Mn particles are found at the free end of the wires. X-ray absorptionfine structure measurements reveal the presence of a significant fraction of Mn-As bonds, suggesting Mn diffusion and incorporation duringwire growth. Transport measurements indicate that the wires are p-type, as expected from doping of GaAs with Mn.