Manganese-Induced Growth of GaAs Nanowires
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文摘
GaAs nanowires have been grown on SiO2 and GaAs by molecular beam epitaxy using manganese as growth catalyst. Transmission electronmicroscopy shows that the wires have a wurtzite-type lattice and that -Mn particles are found at the free end of the wires. X-ray absorptionfine structure measurements reveal the presence of a significant fraction of Mn-As bonds, suggesting Mn diffusion and incorporation duringwire growth. Transport measurements indicate that the wires are p-type, as expected from doping of GaAs with Mn.

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