Local Ion Irradiation-Induced Resistive Threshold and Memory Switching in Nb2O5/NbOx Films

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• 作者：Helge Wylezich ; Hannes M盲hne ; Jura Rensberg ; Carsten Ronning ; Peter Zahn ; Stefan Slesazeck ; Thomas Mikolajick
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2014
• 出版时间：October 22, 2014
• 年：2014
• 卷：6
• 期：20
• 页码：17474-17480
• 全文大小：375K
• ISSN：1944-8252

文摘

Resistive switching devices with a Nb₂O₅/NbO_x bilayer stack combine threshold and memory switching. Here we present a new fabrication method to form such devices. Amorphous Nb₂O₅ layers were treated by a krypton irradiation. Two effects are found to turn the oxide partly into a metallic NbO_x layer: preferential sputtering and interface mixing. Both effects take place at different locations in the material stack of the device; preferential sputtering affects the surface, while interface mixing appears at the bottom electrode. To separate both effects, devices were irradiated at different energies (4, 10, and 35 keV). Structural changes caused by ion irradiation are studied in detail. After successful electroforming, the devices exhibit the desired threshold switching. In addition, the choice of the current compliance defines whether a memory effect adds to the device. Findings from electrical characterization disclose a model of the layer modification during irradiation.

Keywords:

resistive switching; threshold switching; niobium oxide; ion irradiation