Embedding Plasmonic Nanostructure Diodes Enhances Hot Electron Emission
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- 作者：Mark W. Knight ; Yumin Wang ; Alexander S. Urban ; Ali Sobhani ; Bob Y. Zheng ; Peter Nordlander ; Naomi J. Halas
- 刊名：Nano Letters
- 出版年：2013
- 出版时间：April 10, 2013
- 年：2013
- 卷：13
- 期：4
- 页码：1687-1692
- 全文大小：378K
- 年卷期：v.13,no.4(April 10, 2013)
- ISSN：1530-6992
文摘
When plasmonic nanostructures serve as the metallic counterpart of a metal鈥搒emiconductor Schottky interface, hot electrons due to plasmon decay are emitted across the Schottky barrier, generating measurable photocurrents in the semiconductor. When the plasmonic nanostructure is atop the semiconductor, only a small percentage of hot electrons are excited with a wavevector permitting transport across the Schottky barrier. Here we show that embedding plasmonic structures into the semiconductor substantially increases hot electron emission. Responsivities increase by 25脳 over planar diodes for embedding depths as small as 5 nm. The vertical Schottky barriers created by this geometry make the plasmon-induced hot electron process the dominant contributor to photocurrent in plasmonic nanostructure-diode-based devices.