BaAg
2SnSe
4, BaCu
2SnSe
4, and Ba
3Cu
2Sn
3Se
10 were prepared by directly reacting the elements instoichiometric ratios at 800
![](/images/entities/deg.gif)
C, followed by long heating between 600 and 650
![](/images/entities/deg.gif)
C. BaAg
2SnSe
4 crystallizesin the BaAg
2SnS
4 type, space group
I222, BaCu
2SnSe
4 in the SrCu
2GeSe
4 type, space group
Ama2, andBa
3Cu
2Sn
3Se
10 in a new structure type, space group
P2
1/
n. All three structures comprise almost undistortedSnSe
4 tetrahedra and pairs of the group 11 elements (M = Cu and Ag). While both the M atoms arebonded to four Se atoms in each case, the deviations from an MSe
4 tetrahedron are severe, and distinctlydifferent within this series. BaAg
2SnSe
4, BaCu
2SnSe
4, and Ba
3Cu
2Sn
3Se
10 are black semiconductors, withcomputed band gaps of 0.2, 0.7, and 1.2 eV, respectively. The experimental gaps for the former two are0.24 and 0.48 eV, respectively. The electrical conductivities consistently decrease with increasing bandgap.