CO2 Enhanced Chemical Vapor Deposition Growth of Few-Layer Graphene over NiOx

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• 作者：In Hyuk Son ; Hyun Jae Song ; Soonchul Kwon ; Alicja Bachmatiuk ; Seung Jae Lee ; Anass Benayad ; Jong Hwan Park ; Jae-Young Choi ; Hyuk Chang ; Mark H. R眉mmeli
• 刊名：ACS Nano
• 出版年：2014
• 出版时间：September 23, 2014
• 年：2014
• 卷：8
• 期：9
• 页码：9224-9232
• 全文大小：696K
• ISSN：1936-086X

文摘

The use of mild oxidants in chemical vapor deposition (CVD) reactions has proven enormously useful. This was also true for the CVD growth of carbon nanotubes. As yet though, the use of mild oxidants in the CVD of graphene has remained unexplored. Here we explore the use of CO₂ as a mild oxidant during the growth of graphene over Ni with CH₄ as the feedstock. Both our experimental and theoretical findings provide in-depth insight into the growth mechanisms and point to the mild oxidants playing multiple roles. Mild oxidants lead to the formation of a suboxide in the Ni, which suppresses the bulk diffusion of C species suggesting a surface growth mechanism. Moreover, the formation of a suboxide leads to enhanced catalytic activity at the substrate surface, which allows reduced synthesis temperatures, even as low as 700 掳C. Even at these low temperatures, the quality of the graphene is exceedingly high as indicated by a negligible D mode in the Raman spectra. These findings suggest the use of mild oxidants in the CVD fabrication as a whole could have a positive impact.

Keywords:

chemical vapor deposition; CVD; Ni; CO₂; graphene