n- and p-Type Doping Phenomenon by Artificial DNA and M-DNA on Two-Dimensional Transition Metal Dichalcogenides
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- 作者：Hyung-Youl Park ; Sreekantha Reddy Dugasani ; Dong-Ho Kang ; Jeaho Jeon ; Sung Kyu Jang ; Sungjoo Lee ; Yonghan Roh ; Sung Ha Park ; Jin-Hong Park
- 刊名：ACS Nano
- 出版年：2014
- 出版时间：November 25, 2014
- 年：2014
- 卷：8
- 期：11
- 页码：11603-11613
- 全文大小：919K
- ISSN：1936-086X
文摘
Deoxyribonucleic acid (DNA) and two-dimensional (2D) transition metal dichalcogenide (TMD) nanotechnology holds great potential for the development of extremely small devices with increasingly complex functionality. However, most current research related to DNA is limited to crystal growth and synthesis. In addition, since controllable doping methods like ion implantation can cause fatal crystal damage to 2D TMD materials, it is very hard to achieve a low-level doping concentration (nondegenerate regime) on TMD in the present state of technology. Here, we report a nondegenerate doping phenomenon for TMD materials (MoS2 and WSe2, which represent n- and p-channel materials, respectively) using DNA and slightly modified DNA by metal ions (Zn2+, Ni2+, Co2+, and Cu2+), named as M-DNA. This study is an example of interdisciplinary convergence research between DNA nanotechnology and TMD-based 2D device technology. The phosphate backbone (PO4鈥?/sup>) in DNA attracts and holds hole carriers in the TMD region, n-doping the TMD films. Conversely, M-DNA nanostructures, which are functionalized by intercalating metal ions, have positive dipole moments and consequently reduce the electron carrier density of TMD materials, resulting in p-doping phenomenon. N-doping by DNA occurs at 鈭?.4 脳 1010 cm鈥? on MoS2 and 鈭?.3 脳 109 cm鈥? on WSe2, which is uniform across the TMD area. p-Doping which is uniformly achieved by M-DNA occurs between 2.3 脳 1010 and 5.5 脳 1010 cm鈥? on MoS2 and between 2.4 脳 1010 and 5.0 脳 1010 cm鈥? on WSe2. These doping levels are in the nondegenerate regime, allowing for the proper design of performance parameters of TMD-based electronic and optoelectronic devices (VTH, on-/off-currents, field-effect mobility, photoresponsivity, and detectivity). In addition, by controlling the metal ions used, the p-doping level of TMD materials, which also influences their performance parameters, can be controlled. This interdisciplinary convergence research will allow for the successful integration of future layered semiconductor devices requiring extremely small and very complicated structures.