High-Mobility ZnO Nanorod Field-Effect Transistors by Self-Alignment and Electrolyte-Gating

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• 作者：Stefan Thiemann ; Mathias Gruber ; Irina Lokteva ; Johannes Hirschmann ; Marcus Halik ; Jana Zaumseil
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2013
• 出版时间：March 13, 2013
• 年：2013
• 卷：5
• 期：5
• 页码：1656-1662
• 全文大小：403K
• 年卷期：v.5,no.5(March 13, 2013)
• ISSN：1944-8252

文摘

High mobility, solution-processed field-effect transistors are important building blocks for flexible electronics. Here we demonstrate the alignment of semiconducting, colloidal ZnO nanorods by a simple solvent evaporation technique and achieve high electron mobilities in field-effect transistors at low operating voltages by electrolyte-gating with ionic liquids. The degree of alignment varies with nanorod length, concentration and solvent evaporation rate. We find a strong dependence of electron mobility on the degree of alignment but less on the length of the nanorods. Maximum field-effect mobilities reach up to 9 cm² V^鈥? s^鈥? for optimal alignment. Because of the low process temperature (150 掳C), ZnO nanorod thin films are suitable for application on flexible polymer substrates.

Keywords:

field-effect transistors; zinc oxide; nanorods; alignment; electrolyte gating; ionic liquid