Potential Pulse Atomic Layer Deposition of Cu2Se

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• 作者：Justin M. Czerniawski ; Brian R. Perdue ; John L. Stickney
• 刊名：Chemistry of Materials
• 出版年：2016
• 出版时间：January 26, 2016
• 年：2016
• 卷：28
• 期：2
• 页码：583-591
• 全文大小：519K
• ISSN：1520-5002

文摘

Crystalline thin films of cuprous selenide (Cu₂Se) were electrodeposited at room temperature from an aqueous solution containing elemental precursors for Cu and Se, using a potential pulse version of atomic layer deposition. Cyclic voltammetry was used to estimate Anodic and Cathodic cycle potentials for the formation of Cu₂Se, which were then examined to systematically optimize the cycle. Electron probe microanalysis was used to follow the Cu/Se atomic ratios as a function of the cycle parameters, and X-ray diffraction was used to investigate deposit structure: polycrystalline orthorhombic Cu₂Se, with some cubic. Film thicknesses, from spectroscopic ellipsometry, were shown to be proportional to the number of cycles performed (0.02 nm/cycle), and scanning electron microscopy suggested that the deposits were consistent with layer-by-layer growth as a function of the number of cycles.