Ultrahigh Vacuum Surface Studies of the Electrochemical Atomic Layer Deposition of Indium Telluride on n-Type GaAs(100)
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- 作者：Jay Y. Kim ; John L. Stickney
- 刊名：Journal of Physical Chemistry C
- 出版年：2008
- 出版时间：April 17, 2008
- 年：2008
- 卷：112
- 期：15
- 页码：5966 - 5971
- 全文大小：126K
- 年卷期：v.112,no.15(April 17, 2008)
- ISSN：1932-7455
文摘
The electrodeposition of tellurium (Te) and indium (In) atomic layers on n-type GaAs(100) substrates isdescribed. As-received n-GaAs(100) substrates were treated in 10% HF and ultraviolet (UV) ozone cleaned.The substrates were then transferred to an ultrahigh vacuum (UHV) chamber and cleaned by Ar+ ionbombardment. The clean substrate was then transferred into an attached electrochemistry ante-chamber andimmersed in a telluride solution, where a number of deposition potentials were investigated. The resultingAuger peak height ratios, Te/Ga, were plotted versus the Te deposition potential. From the Auger ratios, itwas evident that bulk Te was formed between -0.4 and -0.8 V, while below -0.8 V, a reduction featurewas observed corresponding to the reduction of Te to the telluride ion (Te0 + 2e- 
Te2-). Below -0.9 V,only a surface-limited atomic layer of Te was left on the GaAs surface. Indium deposition on this Te-coatedGaAs surface was also performed, and electrodeposited adlayer thicknesses were calculated from the Augerdata. Indium electrodeposited directly on the GaAs surface resulted in 3D nucleation and growth of widelyspaced In clusters. Electrodeposition of In on an atomic layer of Te on the GaAs surface resulted in layer-by-layer growth. Alternation of atomic layers of Te and In resulted in formation of indium telluride nanofilms,probably In2Te3, by electrochemical atomic layer deposition (ALD). Deposits with up to three cycles wereperformed.
Te2-). Below -0.9 V,only a surface-limited atomic layer of Te was left on the GaAs surface. Indium deposition on this Te-coatedGaAs surface was also performed, and electrodeposited adlayer thicknesses were calculated from the Augerdata. Indium electrodeposited directly on the GaAs surface resulted in 3D nucleation and growth of widelyspaced In clusters. Electrodeposition of In on an atomic layer of Te on the GaAs surface resulted in layer-by-layer growth. Alternation of atomic layers of Te and In resulted in formation of indium telluride nanofilms,probably In2Te3, by electrochemical atomic layer deposition (ALD). Deposits with up to three cycles wereperformed.