Optimization of Temperature-Mediated Organic Semiconducting Crystals on Soft Polymer-Treated Gate Dielectrics
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- 作者：Mi Jang ; Kyung Youl Baek ; Hoichang Yang
- 刊名：Journal of Physical Chemistry C
- 出版年：2013
- 出版时间：December 5, 2013
- 年：2013
- 卷：117
- 期：48
- 页码：25290-25297
- 全文大小：717K
- 年卷期：v.117,no.48(December 5, 2013)
- ISSN：1932-7455
文摘
The temperature-mediated crystal structures of N,N鈥?ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13) on organo-compatible polymer/SiO2 bilayer dielectrics, including either physisorbed or grafted polystyrenes (PSs), were examined and correlated with their electrical characteristics in organic field-effect transistors (OFETs). The crystallinity of the PTCDI-C13 films on these dielectrics increased with increasing annealing temperature (TA), but the semiconductor鈥揹ielectric interfaces were also changed depending on the surface properties of the polymeric dielectrics. When TA was increased above the glass transition temperature of PSs, the 20鈥?0 nm thick physisorbed PS layers became softened and further dewetted from the oxide surfaces, resulting in the subsidence and disconnection of PTCDI-C13 crystal grains into the undulated PS layers. In contrast, the PS monolayer grafted to the SiO2 surface could maintain a wetting layer even at TA = 200 掳C, resulting in a hydroxyl free dielectric surface and highly 蟺-conjugated structures of TA-mediated PTCDI-C13 crystals to achieve high-performance OFETs (field-effect mobility up to 0.2 cm2 V鈥? s鈥?, threshold voltage 1.0 V, on鈥搊ff current ratio >106, and no gate sweep hysteresis).