Multilevel Nonvolatile Memristive and Memcapacitive Switching in Stacked Graphene Sheets

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• 作者：Minji Park ; Sungjin Park ; Kyung-Hwa Yoo
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：June 8, 2016
• 年：2016
• 卷：8
• 期：22
• 页码：14046-14052
• 全文大小：532K
• 年卷期：0
• ISSN：1944-8252

文摘

We fabricated devices consisting of single and double graphene sheets embedded in organic polymer layers. These devices had binary and ternary nonvolatile resistive switching behaviors, respectively. Capacitance–voltage (C–V) curves and scanning capacitance microscopy (SCM) images were obtained to investigate the switching mechanism. The C–V curves exhibited a large hysteresis, implying that the graphene sheets acted as charging and discharging layers and that resistive switching was caused by charges trapped in the graphene layers. In addition, binary capacitive switching behaviors were observed for the device with a single graphene sheet, and ternary capacitive switching behaviors were observed for the device with the double graphene sheets. These results demonstrated that devices consisting of graphene sheets embedded in the polymer layers can be applied to multilevel nonvolatile memcapacitive devices as well as memristive devices.