MoS2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap

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• 作者：Hee Sung Lee ; Sung-Wook Min ; Youn-Gyung Chang ; Min Kyu Park ; Taewook Nam ; Hyungjun Kim ; Jae Hoon Kim ; Sunmin Ryu ; Seongil Im
• 刊名：Nano Letters
• 出版年：2012
• 出版时间：July 11, 2012
• 年：2012
• 卷：12
• 期：7
• 页码：3695-3700
• 全文大小：413K
• 年卷期：v.12,no.7(July 11, 2012)
• ISSN：1530-6992

文摘

We report on the fabrication of top-gate phototransistors based on a few-layered MoS₂ nanosheet with a transparent gate electrode. Our devices with triple MoS₂ layers exhibited excellent photodetection capabilities for red light, while those with single- and double-layers turned out to be quite useful for green light detection. The varied functionalities are attributed to energy gap modulation by the number of MoS₂ layers. The photoelectric probing on working transistors with the nanosheets demonstrates that single-layer MoS₂ has a significant energy bandgap of 1.8 eV, while those of double- and triple-layer MoS₂ reduce to 1.65 and 1.35 eV, respectively.

Keywords:

MoS₂; phototransistor; photoresponse; energy gap