The solid-state reaction between platinum and silicon nanowires grown by the vapor-liquid-solid technique was studied. The reaction productPtSi is an attractive candidate for contacts to p-type silicon nanowires due to the low barrier height of PtSi contacts to p-type Si in the planargeometry, and the formation of PtSi was the motivation for our study. Silicidation was carried out by annealing Pt on Si nanowires from 250to 700
C, and the reaction products were characterized by transmission electron microscopy. Strikingly different morphologies of the reactednanowires were observed depending on the annealing temperature, platinum film thickness, silicon nanowire diameter, and level of unintentionaloxygen contamination in the annealing furnace. Conversion to PtSi was successfully realized by annealing above 400
C in purified N
2 gas.A uniform morphology was achieved for nanowires with an appropriate combination of Si nanowire diameter and Pt film thickness to formPtSi without excess Pt or Si. Similar to the planar silicidation process, oxygen affects the nanowire silicidation process greatly.