Suppressing Twin Domains in Molecular Beam Epitaxy Grown Bi2Te3 Topological Insulator Thin Films

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• 作者：J枚rn Kampmeier ; Svetlana Borisova ; Lukasz Plucinski ; Martina Luysberg ; Gregor Mussler ; Detlev Gr眉tzmacher
• 刊名：Crystal Growth & Design
• 出版年：2015
• 出版时间：January 7, 2015
• 年：2015
• 卷：15
• 期：1
• 页码：390-394
• 全文大小：295K
• ISSN：1528-7505

文摘

The structural perfection of the topological insulator (TI) Bi₂Te₃ is a key issue for its employment in future device applications. State of the art TIs, featuring exotic electronic properties, predominantly suffer from structural defects such as twin domains. A suppression of such domains in molecular beam epitaxy-grown Bi₂Te₃ thin films on Si(111) substrates鈥攎easured by X-ray diffraction pole figure scans鈥攊s presented in this paper. A numerical analysis of van der Waals potentials was performed, revealing the nucleation collinear with the Si(311) reflections of the Si(111) substrate to be energetically preferred.