文摘
It is shown that the growth of II−VI diluted magnetic semiconductor nanowires is possible by the catalytically enhanced molecular beam epitaxy (MBE). Zn1−xMnxTe NWs with manganese content up to x = 0.60 were produced by this method. X-ray diffraction, Raman spectroscopy, and temperature dependent photoluminescence measurements confirm the incorporation of Mn2+ ions in the cation substitutional sites of the ZnTe matrix of the NWs.