Self-Limiting Growth of Hexagonal and Triangular Quantum Dots on (111)A

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• 作者：Masafumi Jo ; Takaaki Mano ; Marco Abbarchi ; Takashi Kuroda ; Yoshiki Sakuma ; Kazuaki Sakoda
• 刊名：Crystal Growth & Design
• 出版年：2012
• 出版时间：March 7, 2012
• 年：2012
• 卷：12
• 期：3
• 页码：1411-1415
• 全文大小：295K
• 年卷期：v.12,no.3(March 7, 2012)
• ISSN：1528-7505

文摘

We report the formation of triangular GaAs quantum dots (QDs) on (111)A substrates using droplet epitaxy. Shape transition from hexagonal to triangular QDs is observed with increasing crystallizing temperature, as a result of different growth rates of step edges on a (111)A substrate. Size statistics illustrate the self-limiting growth of GaAs QDs whose characteristic size is determined by that of Ga droplets. Detailed structural analysis further reveals the three-dimensional structure of QDs. By decreasing the amount of Ga, low-density GaAs QDs are obtained while retaining the triangular shape, which allows the optical properties to be studied at a single QD level.