GaAs/AlGaAs Core Multishell Nanowire-Based Light-Emitting Diodes on Si

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• 作者：Katsuhiro Tomioka ; Junichi Motohisa ; Shinjiroh Hara ; Kenji Hiruma ; Takashi Fukui
• 刊名：Nano Letters
• 出版年：2010
• 出版时间：May 12, 2010
• 年：2010
• 卷：10
• 期：5
• 页码：1639-1644
• 全文大小：382K
• 年卷期：v.10,no.5(May 12, 2010)
• ISSN：1530-6992

文摘

We report on integration of GaAs nanowire-based light-emitting-diodes (NW-LEDs) on Si substrate by selective-area metalorganic vapor phase epitaxy. The vertically aligned GaAs/AlGaAs core-multishell nanowires with radial p-n junction and NW-LED array were directly fabricated on Si. The threshold current for electroluminescence (EL) was 0.5 mA (current density was approximately 0.4 A/cm²), and the EL intensity superlinearly increased with increasing current injections indicating superluminescence behavior. The technology described in this letter could help open new possibilities for monolithic- and on-chip integration of III−V NWs on Si.