Hysteresis in Carbon Nanotube Transistors: Measurement and Analysis of Trap Density, Energy Level, and Spatial Distribution
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- 作者：Rebecca Sejung Park ; Max Marcel Shulaker ; Gage Hills ; Luckshitha Suriyasena Liyanage ; Seunghyun Lee ; Alvin Tang ; Subhasish Mitra ; H.-S. Philip Wong
- 刊名：ACS Nano
- 出版年：2016
- 出版时间：April 26, 2016
- 年：2016
- 卷：10
- 期：4
- 页码：4599-4608
- 全文大小：704K
- 年卷期：0
- ISSN：1936-086X
文摘
We present a measurement technique, which we call the Pulsed Time-Domain Measurement, for characterizing hysteresis in carbon nanotube field-effect transistors, and demonstrate its applicability for a broad range of 1D and 2D nanomaterials beyond carbon nanotubes. The Pulsed Time-Domain Measurement enables the quantification (density, energy level, and spatial distribution) of charged traps responsible for hysteresis. A physics-based model of the charge trapping process for a carbon nanotube field-effect transistor is presented and experimentally validated using the Pulsed Time-Domain Measurement. Leveraging this model, we discover a source of traps (surface traps) unique to devices with low-dimensional channels such as carbon nanotubes and nanowires (beyond interface traps which exist in today’s silicon field-effect transistors). The different charge trapping mechanisms for interface traps and surface traps are studied based on their temperature dependencies. Through these advances, we are able to quantify the interface trap density for carbon nanotube field-effect transistors (∼3 × 1013 cm–2 eV–1 near midgap), and compare this against a range of previously studied dielectric/semiconductor interfaces.