Crystal Growth and Crystal Structure of EuPtIn4

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• 作者：Pallavi Kushwaha ; Arumugam Thamizhavel ; Arun Kumar Nigam ; Srinivasan Ramakrishnan
• 刊名：Crystal Growth & Design
• 出版年：2014
• 出版时间：June 4, 2014
• 年：2014
• 卷：14
• 期：6
• 页码：2747-2752
• 全文大小：363K
• 年卷期：v.14,no.6(June 4, 2014)
• ISSN：1528-7505

文摘

A single crystal of the indium-rich intermetallic compound EuPtIn₄ has been grown by a high-temperature solution growth method, with molten indium as solvent. The crystal structure of the compound was solved from the single crystal X-ray diffraction data and it is found that EuPtIn₄ crystallizes in the orthorhombic crystal structure with the space group Cmcm. The estimated lattice constants are a = 4.5300(7) 脜, b = 16.904(3) 脜, and c = 7.3601(12) 脜 with the unit cell volume V = 563.60(15) 脜³. There are four formula units per unit cell (Z = 4), and the R-parameters are R = 0.0390 and wR² = 0.1033 for 496 unique reflections. A comparison of lattice constants with those of isostructural SrPtIn₄, LaPtIn₄, EuPtIn₄, and YbPtIn₄ indicates that the radius of the rare-earth ion decides the indium octahedra distortion in the bc-plane. This leads to nonmonotonic variation in b and c parameters from the early to the late rare earth element based compounds. EuPtIn₄ is a highly conducting material, with a room temperature resistivity of 25 渭惟路cm. Low-temperature resistivity, magnetization, and heat capacity measurements show two antiferromagnetic transitions near 13 and 5.5 K. From the heat capacity data it was observed that EuPtIn₄ has a large Sommerfeld coefficient (纬), which was estimated to be 725 mJ/K²路mol.