Demonstration of Defect-Free and Composition Tunable GaxIn1鈥?i>xSb Nanowires

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• 作者：Sepideh Gorji Ghalamestani ; Martin Ek ; Bahram Ganjipour ; Claes Thelander ; Jonas Johansson ; Philippe Caroff ; Kimberly A. Dick
• 刊名：Nano Letters
• 出版年：2012
• 出版时间：September 12, 2012
• 年：2012
• 卷：12
• 期：9
• 页码：4914-4919
• 全文大小：330K
• 年卷期：v.12,no.9(September 12, 2012)
• ISSN：1530-6992

文摘

The Ga_xIn_1鈥?i>xSb ternary system has many interesting material properties, such as high carrier mobilities and a tunable range of bandgaps in the infrared. Here we present the first report on the growth and compositional control of Ga_xIn_1鈥?i>xSb material grown in the form of nanowires from Au seeded nanoparticles by metalorganic vapor phase epitaxy. The composition of the grown Ga_xIn_1鈥?i>xSb nanowires is precisely controlled by tuning the growth parameters where x varies from 1 to 0.3. Interestingly, the growth rate of the Ga_xIn_1鈥?i>xSb nanowires increases with diameter, which we model based on the Gibbs鈥揟homson effect. Nanowire morphology can be tuned from high to very low aspect ratios, with perfect zinc blende crystal structure regardless of composition. Finally, electrical characterization on nanowire material with a composition of Ga_0.6In_0.4Sb showed clear p-type behavior.

Keywords:

III鈭扸 semiconductor; nanowire; antimonide; GaInSb; zinc blende structure; MOSFET