Tunnel Field-Effect Transistors Based on InP-GaAs Heterostructure Nanowires

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• 作者：Bahram Ganjipour ; Jesper Wallentin ; Magnus T. Borgstr枚m ; Lars Samuelson ; Claes Thelander
• 刊名：ACS Nano
• 出版年：2012
• 出版时间：April 24, 2012
• 年：2012
• 卷：6
• 期：4
• 页码：3109-3113
• 全文大小：289K
• 年卷期：v.6,no.4(April 24, 2012)
• ISSN：1936-086X

文摘

We present tunneling field-effect transistors fabricated from InP-GaAs heterostructure nanowires with an n-i-p doping profile, where the intrinsic InP region is modulated by a top gate. The devices show an inverse subthreshold slope down to 50 mV/dec averaged over two decades with an on/off current ratio of approximately 10⁷ for a gate voltage swing (V_GS) of 1 V and an on-current of 2.2 渭A/渭m. Low-temperature measurements suggest a mechanism of trap-assisted tunneling, possibly explained by a narrow band gap segment of InGaAsP.

Keywords:

nanowire; tunnel transistor; heterostructure; InP; GaAs; MOSFET