Conductance Enhancement of InAs/InP Heterostructure Nanowires by Surface Functionalization with Oligo(phenylene vinylene)s
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- 作者：Muhammed Ihab Schukfeh ; Kristian Storm ; Ahmed Mahmoud ; Roar R. S酶ndergaard ; Anna Szwajca ; Allan Hansen ; Peter Hinze ; Thomas Weimann ; Sofia Fahlvik Svensson ; Achyut Bora ; Kimberly A. Dick ; Claes Thelander ; Frederik C. Krebs ; Paolo Lugli ; Lars Samuelson ; Marc Tornow
- 刊名：ACS Nano
- 出版年：2013
- 出版时间：May 28, 2013
- 年：2013
- 卷：7
- 期：5
- 页码：4111-4118
- 全文大小：470K
- 年卷期：v.7,no.5(May 28, 2013)
- ISSN：1936-086X
文摘
We have investigated the electronic transport through 3 渭m long, 45 nm diameter InAs nanowires comprising a 5 nm long InP segment as electronic barrier. After assembly of 12 nm long oligo(phenylene vinylene) derivative molecules onto these InAs/InP nanowires, we observed a pronounced, nonlinear I鈥?i>V characteristic with significantly increased currents of up to 1 渭A at 1 V bias, for a back-gate voltage of 3 V. As supported by our model calculations based on a nonequilibrium Green Function approach, we attribute this effect to charge transport through those surface-bound molecules, which electrically bridge both InAs regions across the embedded InP barrier.