Study of Nonpolar GaN/ZnO Heterostructures Grown by Molecular Beam Epitaxy

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• 作者：Chiao-Yun Chang ; Huei-Min Huang ; Yu-Pin Lan ; Tien-Chang Lu ; Li-Wei Tu ; Wen-Feng Hsieh
• 刊名：Crystal Growth & Design
• 出版年：2013
• 出版时间：July 3, 2013
• 年：2013
• 卷：13
• 期：7
• 页码：3098-3102
• 全文大小：350K
• 年卷期：v.13,no.7(July 3, 2013)
• ISSN：1528-7505

文摘

The growth mechanism and characteristics of the nonpolar GaN/ZnO heterostructure grown on the r-plane sapphire substrate by using molecular beam epitaxy were studied. The crystal interaction between GaN and ZnO epitaxial layers was clarified by using transmission electron microscopy and X-ray diffraction. A new epitaxial relationship of ZnGa₂O₄ (220)//GaN (101虆3̅) in the normal surface direction was obtained in the GaN/ZnO heterostructure. It was believed that the formation of ZnGa₂O₄ (220) was due to the recrystallization of the ZnO layer with Ga atoms, which in turn resulted in the formation of semipolar-oriented GaN. In addition, the main optical transition in the GaN/ZnO heterostructure was attributed to the existence of the interface states and new ZnO:(Ga,N) alloys.