Creating Graphene p鈥搉 Junctions Using Self-Assembled Monolayers
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- 作者：Hossein Sojoudi ; Jose Baltazar ; Laren M. Tolbert ; Clifford L. Henderson ; Samuel Graham
- 刊名：ACS Applied Materials & Interfaces
- 出版年：2012
- 出版时间：September 26, 2012
- 年：2012
- 卷：4
- 期：9
- 页码：4781-4786
- 全文大小：350K
- 年卷期：v.4,no.9(September 26, 2012)
- ISSN：1944-8252
文摘
3-Aminopropyltriethoxysilane (APTES) and perfluorooctyltriethoxysilane (PFES) were used to modify the interface between transferred CVD graphene films and its supporting dielectric to create n-type and p-type graphene, respectively. A graphene p鈥搉 junction was obtained by patterning both modifiers on the same dielectric and verified through the creation of a field effect transistor (FET). Characteristic I鈥?i>V curves indicate the presence of two separate Dirac points which confirms an energy separation of neutrality points within the complementary regions. This method minimizes doping-induced defects and results in thermally stable graphene p鈥搉 junctions for temperatures up to 200 掳C.