Charge Separation in Type-II Semiconductor Heterodimers
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- 作者：Toshiharu Teranishi ; Masanori Sakamoto
- 刊名：The Journal of Physical Chemistry Letters
- 出版年：2013
- 出版时间：September 5, 2013
- 年：2013
- 卷：4
- 期：17
- 页码：2867-2873
- 全文大小：493K
- 年卷期：v.4,no.17(September 5, 2013)
- ISSN：1948-7185
文摘
Highly efficient photoenergy conversion in semiconductor nanoparticle heterostructures requires the formation of epitaxial heterointerfaces and band alignment engineering. This requirement has led to attention being given to recent advances and prospects in the charge separation properties of type-II semiconductor heterodimers composed of chalcogenide鈥揷halcogenide blends. Type-II semiconductor heterodimers with a staggered alignment of band edges at the heterointerface can be synthesized by seeded growth or ion exchange to promote the spatial charge separation between electrons and holes in different parts of the heterostructure. Special attention has been given to CdS鈥揅u2鈥?i>xS (0 鈮?x 鈮?0.0625) and CdS鈥揅dTe combinations where CdS is a commonly used n-type semiconductor and both Cu2鈥?i>xS and CdTe are proper p-type semiconductors that are used as light absorbers in heterojunction solar cells.